A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
Y Liu, Y Lv, S Guo, Z Luan, A Cheng, Z Lin, Y Yang… - Scientific reports, 2021 - nature.com
In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate
technology was fabricated. Sample transistors of different structures and sizes were …
technology was fabricated. Sample transistors of different structures and sizes were …
High performance AlInN/AlN/GaN p-GaN back barrier gate-recessed enhancement-mode HEMT
In the present work, we propose and perform extensive simulation study of the novel device
structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate …
structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate …
Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs
In the present work, we have discussed the effect of InGaN back barrier on device
performances of 100 nm gate length AlInN/AlN/GaN metal oxide semiconductor high …
performances of 100 nm gate length AlInN/AlN/GaN metal oxide semiconductor high …
Analog/RF performance of AlInN/GaN underlap DG MOS-HEMT
H Pardeshi - Superlattices and Microstructures, 2015 - Elsevier
This work uncovers the potential benefit of AlInN/GaN underlap double-gate MOS-HEMT for
RF and analog applications. The device channel consists of a lattice-matched wideband Al …
RF and analog applications. The device channel consists of a lattice-matched wideband Al …
Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier
In the present work, we have studied the influence of Aluminium Gallium Nitride (AlGaN)
back-barrier (BB) thickness on the direct current (DC) and short channel effects (SCEs) of …
back-barrier (BB) thickness on the direct current (DC) and short channel effects (SCEs) of …
High Breakdown Electric Field MIS-Free Fully Recessed-Gate Normally Off AlGaN/GaN HEMT With N2O Plasma Treatment
In this article, the AlGaN barrier fully removed recessed-gate normally off AlGaN/GaN high
electron mobility transistors (HEMTs) with N 2 O plasma treatment are fabricated. The low …
electron mobility transistors (HEMTs) with N 2 O plasma treatment are fabricated. The low …
Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment
A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT)
has been fabricated, by combining nanowire channel (NC) structure fabrication and N 2 O …
has been fabricated, by combining nanowire channel (NC) structure fabrication and N 2 O …
Comparative study on analog & RF parameter of InALN/AlN/GaN normally off HEMTs with and without AlGAN back barrier
In this work, we have made a relative assessment of lattice-matched In 0.17 Al 0.83
N/AlN/GaN normally off HEMT device with AlGaN back-barrier (BB) and without back-barrier …
N/AlN/GaN normally off HEMT device with AlGaN back-barrier (BB) and without back-barrier …
Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors
In this work, three AlGaN/GaN nanowire channel high electron mobility transistors (NC‐
HEMTs) with different channel widths have been fabricated. The temperature dependent …
HEMTs) with different channel widths have been fabricated. The temperature dependent …
[PDF][PDF] Influence of the GaN cap layer thickness on the two-dimensional electron gas (2-DEG) sheet charge density of GaN/AlInN/GaN HEMTs with polarization effect
A Bellakhdar, A Telia - Digest Journal of Nanomaterials and …, 2022 - chalcogen.ro
Recently, AlInN/GaN High electron mobility transistors (HEMT) devices, based on III-nitride
wide band gap semiconductors, are of increasing interest due to their enormous potential …
wide band gap semiconductors, are of increasing interest due to their enormous potential …