Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and
power devices, supporting a future energy-saving society. Here we present evidence of p …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-
GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become …

Designing and fabrication of 10-kV 4H-SiC PiN diodes with an improved junction termination
structure have been investigated. An improved bevel mesa structure and a single-zone …

This paper reviews the bevel-edge termination techniques for silicon carbide (SiC) power
devices, such as bevel junction termination extension (JTE), resistive-bevel termination …

AlGaN/GaN high-electron-mobility transistors (HEMTs) with various field-plate (FP) and gate-
to-drain distance extensions are fabricated and investigated. Experiments are carried out on …

This unique new resource provides a comparative introduction to vertical Gallium Nitride
(GaN) and Silicon Carbide (SiC) power devices using real commercial device data …

The article discusses the impact of thermal oxidation process conditions on the implanted
junction-termination-extension (JTE) dose using various edge termination structures for …