Recent advances in complementary metal oxide semiconductor (CMOS) processing,
continuous scaling of gate length, and progress in silicon on insulator have stirred serious …

Abstract A 0.25 µm SiGe: C BiCMOS technology family (SG25H) with high-speed npn and
pnp transistors for different performance requirements is presented. A CMOS-friendly …

We present the status and direction of silicon semiconductor technologies targeted for
applications such as wireless, networking, instrumentation, and storage markets. Various …

Time-correlated single photon counting continues to gain importance in a wide range of
applications. Most prominently, it is used for time-resolved fluorescence measurements with …

This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits
(ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown …

A strategy for compact modeling the static thermal coupling between the emitter fingers of
SiGe heterojunction bipolar transistors (SiGe-HBTs) is described. An extraction methodology …

A simple yet accurate extraction method for the emitter and thermal resistance of bipolar
transistors is presented. Only DC measurements taken on a thermally controlled wafer …

In order to improve the total ionizing dose (TID) and single event upset (SEU) radiation
tolerance of bulk CMOS technologies we applied two constructive measures. TID induced …

(57) ABSTRACT A complementary BiCMOS semiconductor device comprises a substrate of
a first conductivity type and a number of active regions which are provided therein and which …

Different technological implementations of high-speed of SiGe HBTs are compared which all
represent a performance level of fmax close to 500 GHz. In addition to technologies with non …