The electronic properties of graphene

AH Castro Neto, F Guinea, NMR Peres… - Reviews of modern …, 2009 - APS
This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of
carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons …

Spin-dependent tunnelling in magnetic tunnel junctions

EY Tsymbal, ON Mryasov… - Journal of Physics …, 2003 - iopscience.iop.org
The phenomenon of electron tunnelling has been known since the advent of quantum
mechanics, but continues to enrich our understanding of many fields of physics, as well as …

Magnetically engineered spintronic sensors and memory

S Parkin, X Jiang, C Kaiser, A Panchula… - Proceedings of the …, 2003 - ieeexplore.ieee.org
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling
in transition metal multilayers just over a decade ago has enabled the development of new …

Determination of the Spin Polarization of Half-Metallic by Point Contact Andreev Reflection

Y Ji, GJ Strijkers, FY Yang, CL Chien, JM Byers… - Physical Review Letters, 2001 - APS
Andreev reflection at a Pb/CrO 2 point contact has been used to determine the spin
polarization of single-crystal CrO 2 films made by chemical vapor deposition. The spin …

Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions

E Cobas, AL Friedman, OMJ van't Erve… - Nano …, 2012 - ACS Publications
Graphene has been widely studied for its high in-plane charge carrier mobility and long spin
diffusion lengths. In contrast, the out-of-plane charge and spin transport behavior of this …

Andreev reflections at metal/superconductor point contacts: Measurement and analysis

GJ Strijkers, Y Ji, FY Yang, CL Chien, JM Byers - Physical Review B, 2001 - APS
We present point-contact Andreev reflection measurements of X/N b contacts, where X= Ni,
Co, Fe, and Cu. Experimental conductance-voltage curves were analyzed with the Blonder …

Spin-polarized resonant tunneling in magnetic tunnel junctions

S Yuasa, T Nagahama, Y Suzuki - Science, 2002 - science.org
Insertion of a thin nonmagnetic copper Cu (001) layer between the tunnel barrier and the
ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of …

Tunneling path toward spintronics

GX Miao, M Münzenberg… - Reports on Progress in …, 2011 - iopscience.iop.org
The phenomenon of quantum tunneling, which was discovered almost a century ago, has
led to many subsequent discoveries. One such discovery, spin polarized tunneling, was …

Temperature dependence of the interfacial spin polarization of

V Garcia, M Bibes, A Barthélémy, M Bowen, E Jacquet… - Physical Review B, 2004 - APS
We have measured the tunneling magnetoresistance (TMR) of magnetic tunnel junctions
based on La 2/3 Sr 1/3 MnO 3 and various barrier materials (SrTiO 3, TiO 2, LaAlO 3). The …

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

M Piquemal-Banci, R Galceran… - Journal of Physics D …, 2017 - iopscience.iop.org
This review focuses on the recent experimental integration of 2D materials, mostly graphene
but also h-BN and dichalochogenides, such as MoS 2 and WS 2, in magnetic tunnel …