Magnetic tunnel junction applications
Spin-based devices can reduce energy leakage and thus increase energy efficiency. They
have been seen as an approach to overcoming the constraints of CMOS downscaling …
have been seen as an approach to overcoming the constraints of CMOS downscaling …
An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …
challenges for electronic system designers and nuclear power plant personnel, in particular …
Non-volatile spintronic flip-flop design for energy-efficient SEU and DNU resilience
In this paper, low-energy radiation-hardening approaches are proposed to develop non-
volatile (NV) flip-flop (FF) circuits using spintronic devices. In particular, spin Hall effect …
volatile (NV) flip-flop (FF) circuits using spintronic devices. In particular, spin Hall effect …
Clockless spin-based look-up tables with wide read margin
In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using
spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed …
spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed …
Reliable, high-performance, and nonvolatile hybrid SRAM/MRAM-based structures for reconfigurable nanoscale logic devices
Programmable logic devices (PLDs) based on static random access memory (SRAM) are
being used widely in digital design thanks to their infinite configurability and high …
being used widely in digital design thanks to their infinite configurability and high …
Low power, and highly reliable single event upset immune latch for nanoscale CMOS technologies
The susceptibility of sequential logic circuits to radiation induced soft errors is increasing as
CMOS transistors are scaling down and the supply voltage is decreasing. Latch circuits are …
CMOS transistors are scaling down and the supply voltage is decreasing. Latch circuits are …
High-dose X-ray radiation induced MgO degradation and breakdown in spin transfer torque magnetic tunnel junctions
Q He, H Shi, Y Wang, L Cao, X Gu, J Wu, G Hong… - Scientific Reports, 2022 - nature.com
Magnetic tunnel junction (MTJ) with magnesium oxide (MgO) tunnel barrier is the core
element of spin transfer torque-based magnetic random access memory. For the application …
element of spin transfer torque-based magnetic random access memory. For the application …
Fundamentals, modeling, and application of magnetic tunnel junctions
Aggressive Metal Oxide Semiconductor (MOS) technology scaling in digital circuits has
resulted in important challenges including a significant increase in leakage currents, short …
resulted in important challenges including a significant increase in leakage currents, short …
Modern face recognition with deep learning
PJ Thilaga, BA Khan, AA Jones… - … Conference on Inventive …, 2018 - ieeexplore.ieee.org
Facial recognition systems are commonly used for verification and security purposes but the
levels of accuracy are still being improved. Errors occurring in facial feature detection due to …
levels of accuracy are still being improved. Errors occurring in facial feature detection due to …
Self-Organized Sub-bank SHE-MRAM-based LLC: An energy-efficient and variation-immune read and write architecture
In order to reduce static energy consumption, emerging Non-Volatile Memory (NVM)
technologies such as Spin Transfer Torque Magnetic RAM (STT-MRAM), Spin-Hall Effect …
technologies such as Spin Transfer Torque Magnetic RAM (STT-MRAM), Spin-Hall Effect …