The photoluminescence and optoelectronics properties are very important for gallium nitride
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …

Considering their reduced size and weight, low cost and portability, self-powered
photodetectors that can be functioned independently of an external power supply are …

We described a new structure photodetector, which is constructed by p–n heterojunction
nanowire arrays of PANI (polyaniline)/CdS. The nanowire arrays exhibit excellent rectifying …

Novel ZrO 2/silicone hybrid materials useful for the encapsulation of light-emitting diodes
(LEDs) are synthesized by in situ sol–gel reaction of zirconium propoxide directly in a …

Synthesis of GaN nanoparticles (NPs) by a novel chemical co-precipitation method and the
effect of nitridation temperature on the structural, optical and electrical properties have been …

Memristive systems have potential applications in nonvolatile memories and even
unexplored functionalities in electronics. However, progress has been delayed by difficulties …

A facile method for the synthesis of gallium nitride (GaN) and indium gallium nitride (InGaN)
nanoparticles (NPs) has been reported by simple chemical co-precipitation method. The …

Large quantities of gallium nitride (GaN) nanoparticles were successfully synthesized via a
facile sol-gel approach. X-ray diffraction analysis confirms the polycrystalline nature of the …

Due to limitations of low-efficiency, indirect bandgap, large lattice mismatch with other
semiconductors, and low carrier mobility, the development of efficient active region …

The atomic structures and the electronic states of active and inactive dopant sites in
semiconductor are elucidated successfully by using X-ray absorption near-edge structure …