MoS 2 is a two-dimensional material with a band gap depending on the number of layers
and tunable by an external electric field. The experimentally observed intralayer band-to …

The Tunnel Field Effect Transistors (TFETs) are used as a promising candidate in low power
applications at the nanometer scale primarily because the conventional Metal-Oxide …

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire
tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces …

Energy-and momentum-conserving resonant tunneling observed between two layers of two-
dimensional semiconductors could be used to create interlayer tunnel field-effect transistors …

\ce {MoS_2} is a two dimensional material with a band gap depending on the number of
layers and tunable by an external electric field. The experimentally observed intralayer band …

As the dimensions of the transistors are shrinking below, nanometers regime play a vital role
in researches. Scaling allows for the packaging of over a million transistors on a single chip …

Interlayer tunnel field effect transistors (ITFETs) make use of resonant tunneling between two
layers of two-dimensional semiconductors to create a negative differential resistance. A …

A variety of charge-based logic devices are being investigated as possible technology
options for the beyond-CMOS era. The tunneling devices, such as the Bilayer Pseudo Spin …

The underlying physics of various quasi-two-dimensional (quasi-2D) electronics systems
and associated quantum effects is studied using numerical simulations based on quantum …

The unique electrical and optical properties of two-dimensional (2D) materials has spurred
intense research interest towards development of nanoelectronic devices utilizing these …