US PATENT DOCUMENTS 2004O160812 A1 8/2004 Rinerson et al. 2004/0160817 A1
8/2004 Rinerson et al. 4,204,028 A 5/1980 Donley 2004/0160818 A1 8/2004 Rinerson et al …

An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …

A resistive random access memory cell is formed on a semiconductor substrate. First and
second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is …

2,655,609 A 10/1953 Shockley 2.971, 140 A 12/1959 Chappey et al. 3,796,926 A 3, 1974
Cole et al. 4,204,028 A 5/1980 Donley 4499, 557 A 2/1985 Holmberg et al. 4,646,266 A …

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte
element in response to an applied electric field in one direction only, causing a conductive …

A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a
layer of a resistivity-switching material arranged electrically in series, wherein the resistivity …

6,545,898 B1 4/2003 Scheuerlein 6,618,295 B2 9, 2003 Scheuerlein 6,711,068 B2* 3/2004
Subramanian et al... 365/189.02 6,735,104 B2 5, 2004 Scheuerlein 6,753,561 B1 6/2004 …

A method of forming a non-volatile resistance variable device includes forming a first
conductive electrode material on a substrate. A metal doped chalcogenide comprising …

(54) HETEROJUNCTION DEVICE COMPRISING 3,796,926 A 3, 1974 Cole et al. A
SEMCONDUCTOR ANDA 4,203,123 A 5/1980 Shanks RESISTIVITY-SWITCHING OXDE …

In some aspects, a method of forming a memory cell is pro vided that includes (1) forming a
first conductor above a Substrate;(2) forming a reversible resistance-switching ele ment …