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Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
H Zhang, C Huang, K Song, H Yu, C ** of high aluminum-containing group III-nitrides
YH Liang, E Towe - Applied Physics Reviews, 2018 - pubs.aip.org
The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …
that are critical to a number of technologies in modern life—the other being silicon. Light …
High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes
AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only
alternative technology to replace mercury lamps for water purification and disinfection. At …
alternative technology to replace mercury lamps for water purification and disinfection. At …
Highly responsive switchable broadband DUV‐NIR photodetector and tunable emitter enabled by uniform and vertically grown III–V nanowire on silicon substrate for …
Low‐dimensional semiconductor nanostructures, particularly in the form of nanowire
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …
AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics
Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …
State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport
X Yao, B Zhang, H Hu, Y Wang, Z Kong, Y Wu… - Journal of Crystal …, 2023 - Elsevier
Abstract SiC, GaN, diamond, and AlN known as wide band-gap semiconductors, integrate
the advantages of microelectronics, optoelectronics, and power electronics. The ultra-wide …
the advantages of microelectronics, optoelectronics, and power electronics. The ultra-wide …
AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …