Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

In this letter, effects of top electrodes (TEs) on ferroelectric properties of Hf 0.5 Zr 0.5 O 2
(HZO) thin films are examined systematically. The remnant polarization (Pr) of HZO thin films …

In this letter, the endurance property of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric capacitor
has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN …

Piezoelectric sensors are excellent damage detectors that can be applied to structural health
monitoring (SHM). SHM for complex structures of aerospace vehicles working in harsh …

Hafnium oxide-and GeSbTe-based functional layers are promising candidates in material
systems for emerging memory technologies. They are also discussed as contenders for …

Metal–ferroelectric–metal (MFM) capacitors on flexible substrates are promising for flexible
nonvolatile memory applications, while the insufficient scalability of perovskite-based …

Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with HfO 2 seed
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …

Highlights•The properties of HfO 2 MFM ferroelectric memory under room temperature and
low temperature proton irradiation were studied.•The microcosmic properties of the …

HfO 2-based ferroelectric field-effect transistors (FeFET) on Si were employed as the
platform to investigate the impact of 60 Co γ-rays radiation on memory characteristics. For …

In application scenarios such as astronautics, high-altitude aircraft, medical radiography,
high-energy physics, and nuclear power plants, the irradiation resistance of electronic …