Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in -layer tunnel junctions
The precise positioning of dopants in semiconductors using scanning tunneling
microscopes has led to the development of planar dopant-based devices, also known as δ …
microscopes has led to the development of planar dopant-based devices, also known as δ …
Superexchange coupling of donor qubits in silicon
Atomic engineering in a solid-state material has the potential to functionalize the host with
novel phenomena. STM-based lithographic techniques have enabled the placement of …
novel phenomena. STM-based lithographic techniques have enabled the placement of …
Influence of imperfections on tunneling rate in -layer junctions
The atomically precise placement of dopants in semiconductors using scanning tunneling
microscopes has been used to create planar dopant-based devices, enabling the …
microscopes has been used to create planar dopant-based devices, enabling the …
Room Temperature Quantum Control of N‐Donor Electrons at Si/SiO2 Interface
The manuscript theoretically discusses various important aspects for donor atom based
single qubit operations in silicon (Si) quantum computer architecture at room temperature …
single qubit operations in silicon (Si) quantum computer architecture at room temperature …
Quantum charge sensing using semiconductor device based on -layer tunnel junctions
We report a novel nanoscale device concept based on a highly doped $\delta $-layer tunnel
junction embedded in a semiconductor for charge sensing. Recent advances in Atomic …
junction embedded in a semiconductor for charge sensing. Recent advances in Atomic …
Roadmap on Atomic-scale Semiconductor Devices
Spin states in semiconductors provide exceptionally stable and noise-resistant
environments for qubits, positioning them as optimal candidates for reliable quantum …
environments for qubits, positioning them as optimal candidates for reliable quantum …
Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in δ-layer tunnel junctions
JM Granado, D Mamaluy - 2023 - researchsquare.com
The precise positioning of dopants in semiconductors using scanning tunneling
microscopes has led to the development of planar dopant-based devices, also known as δ …
microscopes has led to the development of planar dopant-based devices, also known as δ …
[PDF][PDF] Predictive Quantum Simulation and Device Physics of GAAFETs
Recently we have presented a numerically efficient and general implementation of Non-
Equilibrium Green's Function (NEGF) formalism that is fully charge self-consistent and …
Equilibrium Green's Function (NEGF) formalism that is fully charge self-consistent and …