Semiconductor-based gas sensors have been applied to a variety of applications, including
environmental, safety, and health monitoring. Extensive efforts have been made to improve …

The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting
crystals faces challenges due to diminished gate electrostatics and increased charge carrier …

Computing in memory (CIM) breaks the conventional von Neumann bottleneck through in
situ processing. Monolithic integration of digital and analog CIM hardware, ensuring both …

In recent years, neuromorphic computing has been rapidly developed to overcome the
limitations of von Neumann architecture. In this regard, the demand for high‐performance …

Hardware neuromorphic systems are crucial for the energy‐efficient processing of massive
amounts of data. Among various candidates, hafnium oxide ferroelectric tunnel junctions …

We demonstrate the factors that determine the tunneling electroresistance (TER) of the
ferroelectric tunnel junction (FTJ) by investigating the effects of temperature () and the …

We investigate the effect of post-metal annealing temperature () on ferroelectric (FE)
resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through …

To promote the practical application of ferroelectric devices, we present a systematical study
on ferroelectric properties of 10nm HZO capacitor at the high temperature application …

Ferroelectric (FE) materials are key to advancing electronic devices owing to their non‐
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …

We demonstrate that the resistance switching (RS) of an undoped hafnium oxide (HfOx)-
based ferroelectric tunnel junction (FTJ) is affected not only by ferroelectric domain switching …