Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications
Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …
application space of wide bandgap semiconductors. Promising physical properties of binary …
High-sensitive optical thermometry via thermally coupled levels of Er in AlN thin film
Abstract An Er 3+-doped AlN film has been prepared by radio frequency magnetron
sputtering and its photoluminescence (PL) characteristics were studied in terms of optical …
sputtering and its photoluminescence (PL) characteristics were studied in terms of optical …
[HTML][HTML] Excitonic and deep-level emission from N-and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N-
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …
The influence of temperature of nitridation and AlN buffer layer on N-polar GaN
Y Li, X Hu, Y Song, Z Su, H Jia, W Wang, Y Jiang… - Materials Science in …, 2022 - Elsevier
The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium
nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour …
nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour …
Strain-Induced Valence Band Splitting Enabling Above-Bandgap Exciton Luminescence in Epitaxial Mg3N2 Thin Films
Excitons are the lowest excited state of the electronic subsystem in semiconductors,
composed of a bound electron–hole pair interacting via screened coulomb potential …
composed of a bound electron–hole pair interacting via screened coulomb potential …
A solar-blind vacuum-ultraviolet photodetector based on free-standing lamellar aluminum nitride single crystal
High-quality aluminum nitride (AlN) crystals are the key material for the development of high-
performance solid-state solar-blind vacuum-ultraviolet (VUV) photodetectors. However, the …
performance solid-state solar-blind vacuum-ultraviolet (VUV) photodetectors. However, the …
Luminescence of AlN: Eu ceramics: Properties and mechanisms
B Berzina, R Ruska, J Cipa, L Trinkler, A Sarakovskis… - Optical Materials, 2022 - Elsevier
Abstract Luminescence processes of AlN: Eu ceramics, prepared by high temperature spark
plasma sintering method, were studied basing on material spectral characterization by …
plasma sintering method, were studied basing on material spectral characterization by …
A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN
L Peters, C Margenfeld, J Krügener… - … status solidi (a), 2023 - Wiley Online Library
The commonly observed absorption around 265 nm in AlN is hampering the outcoupling
efficiency of light‐emitting diodes (LEDs) emitting in the UV‐C regime. Carbon impurities in …
efficiency of light‐emitting diodes (LEDs) emitting in the UV‐C regime. Carbon impurities in …
[HTML][HTML] Boosting the photodetection of bulk aluminum nitride crystals-based MSM device through an additional electrode
Aluminum nitride (AlN) exhibits excellent high-temperature resistance, chemical stability,
and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors. In …
and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors. In …
Sm3+-doped oxygen-rich AlN film: Probing luminescence thermometry and evidencing energy transfer via Sm-O pairs
Photoluminescence (PL) of a Sm 3+-doped (∼ 0.2 at%) AlN thin film is studied and
compared to an undoped film. Being deposited by radio frequency magnetron sputtering, the …
compared to an undoped film. Being deposited by radio frequency magnetron sputtering, the …