The field of microelectromechanical systems (MEMS) for photonic integrated circuits (PICs)
is reviewed. This field leverages mechanics at the nanometer to micrometer scale to improve …

Featured Application Optical interconnects for data centers. Abstract The rapid increase in
total transmission capacity within and between data centers requires the construction of low …

III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …

The monolithic integration of power-efficient optoelectronic devices with CMOS circuits is
critical for future on-chip optical communication. In such platforms, ultra-high-speed …

InP membranes have appeared in the last decade as a viable integrated photonics platform,
suitable for adding photonic functions to silicon electronics. It combines the strengths of …

In this work, we present the fabrication process of a 3~μm-thick AlGaInAs-based vertical pin
laser diode structure grown on a directly bonded InP-SiO2/Si (InPoSi) substrate. High-quality …

Novel CMOS-Compatible Ultralow Capacitance Hybrid III-V/Si Photodetectors Tested up to 32
Gbps NRZ Page 1 Th3B.3.pdf OFC 2019 © OSA 2019 Novel CMOS-Compatible Ultralow …

Abstract The properties of InAs/In 0.53 Ga 0.37 As triangular quantum wells (QWs) grown on
an InP/SiO 2/Si integrated substrate by ion-slicing technology are investigated. The material …

Hybrid integration of III–V materials onto silicon by direct bonding technique is a mature and
promising approaches to develop advanced photonic integrated devices into the silicon …

AlGaInAs MQW Laser Regrowth on Heterogenerous InP- on-SOI : Performance for Different
Silicon Cavity Designs Page 1 1 AlGaInAs MQW Laser Regrowth on Heterogenerous InPon-SOI …