High-throughput design of perpendicular magnetic anisotropy at quaternary Heusler and MgO interfaces
Heusler alloys combined with MgO interfaces exhibit interfacial perpendicular magnetic
anisotropy, making them attractive for energy-efficient spintronic technologies. However …
anisotropy, making them attractive for energy-efficient spintronic technologies. However …
Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface
The voltage-controlled magnetic anisotropy (VCMA) effect is a key to realising high-speed,
ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a …
ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a …
Giant magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions with 2D ferroelectrics
Y Chen, Z Tang, M Dai, X Luo, Y Zheng - Nanoscale, 2022 - pubs.rsc.org
Multiferroic tunneling junctions (MFTJs), composed of two magnetic electrodes separated by
an ultrathin ferroelectric (FE) thin film as a barrier, have received great attention in multi …
an ultrathin ferroelectric (FE) thin film as a barrier, have received great attention in multi …
Giant tunneling magnetoresistance in insulated altermagnet/ferromagnet junctions induced by spin-dependent tunneling effect
F Liu, Z Zhang, X Yuan, Y Liu, S Zhu, Z Lu, R **ong - Physical Review B, 2024 - APS
The nondegenerate energy bands along a specific path of altermagnet enable the
realization of magnetic tunnel junctions (MTJs) with high tunnel magnetoresistance (TMR) …
realization of magnetic tunnel junctions (MTJs) with high tunnel magnetoresistance (TMR) …
Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first …
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a
series of magnetic tunnel junctions (MTJs) with L 1 1-ordered fcc ferromagnetic alloys and …
series of magnetic tunnel junctions (MTJs) with L 1 1-ordered fcc ferromagnetic alloys and …
Nano-crystal domains in Co-based fcc (111) epitaxial magnetic junctions and their impact on tunnel magnetoresistance
Nano-crystal domain structures formed in a MgO barrier and their effects on tunnel
magnetoresistance (TMR) in epitaxial fcc-Co 90 Fe 10 (CoFe)(111)/MgO (111)/CoFe (111) …
magnetoresistance (TMR) in epitaxial fcc-Co 90 Fe 10 (CoFe)(111)/MgO (111)/CoFe (111) …
Magnetoresistance and Electric Polarization in the LuxMn1–xS Compound
SS Aplesnin, MN Sitnikov, AM Kharkov… - … status solidi (b), 2022 - Wiley Online Library
Using the Hall effect measurements, it is established that the sign of carriers in the LuxMn1–
xS solid solutions changes upon temperature and concentration variations. The extrema in …
xS solid solutions changes upon temperature and concentration variations. The extrema in …
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with barriers
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic
tunnel junctions (MTJs) with SrTiO 3 barriers, Co/SrTiO 3/Co (111) and Ni/SrTiO 3/Ni (111) …
tunnel junctions (MTJs) with SrTiO 3 barriers, Co/SrTiO 3/Co (111) and Ni/SrTiO 3/Ni (111) …
Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes
Z Chen, G Li, H Wang, Q Tang, ZJ Li - Physical Chemistry Chemical …, 2021 - pubs.rsc.org
Designing devices with excellent spin-polarized properties has been a challenge in physics
and materials science. In this work, we report a theoretical investigation of the spin injection …
and materials science. In this work, we report a theoretical investigation of the spin injection …
Local density of states as a probe for tunneling magnetoresistance effect: Application to ferrimagnetic tunnel junctions
We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which
describe the magnetic tunnel junctions (MTJ). First, taking a conventional ferromagnetic MTJ …
describe the magnetic tunnel junctions (MTJ). First, taking a conventional ferromagnetic MTJ …