Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications

A Gassenq, S Tardif, K Guilloy, N Pauc… - 2015 IEEE 12th …, 2015 - ieeexplore.ieee.org
Highly strained germanium is thought of as a gain medium for silicon photonics laser
sources. In order, to turn the bandgap from indirect to direct, tensile strain is nowadays …

[LIVRE][B] Characterization of GeSn Semiconductors for Optoelectronic Devices

H Stanchu - 2021 - search.proquest.com
Germanium-tin alloys with Sn compositions higher than 8 at.% to 10 at.% have recently
attracted significant interest as a group IV semiconductor that is ideal for active photonics on …