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Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications
Highly strained germanium is thought of as a gain medium for silicon photonics laser
sources. In order, to turn the bandgap from indirect to direct, tensile strain is nowadays …
sources. In order, to turn the bandgap from indirect to direct, tensile strain is nowadays …
[LIVRE][B] Characterization of GeSn Semiconductors for Optoelectronic Devices
H Stanchu - 2021 - search.proquest.com
Germanium-tin alloys with Sn compositions higher than 8 at.% to 10 at.% have recently
attracted significant interest as a group IV semiconductor that is ideal for active photonics on …
attracted significant interest as a group IV semiconductor that is ideal for active photonics on …