In the last two decades, several new concepts for improving the performance of infrared
detectors have been proposed. These new concepts particularly address the drive towards …

The development of the HgCdTe alloy as the most important intrinsic semiconductor for
infrared (IR) technology is well established and recognized. In spite of the achievements in …

Indium antimonide (InSb) was first discovered semiconductor in the early 1950s 1, 2 that had
the smallest energy gap among any semiconductors known at that time and naturally its …

A single photodetector capable of switching its peak spectral photoresponse between two
wavelength bands is highly useful, particularly for the infrared (IR) bands in applications …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

In 1959, Lawson and co-workers published the paper which triggered development of
variable band gap Hg 1− x Cd x Te (HgCdTe) alloys providing an unprecedented degree of …

Development of focal plane arrays started in seventies last century and has revolutionized
imaging systems in the next decades. This paper presents progress in optical detector …

Fundamental and technological issues associated with the development and exploitation of
the most advanced infrared technologies is discussed. In these classes of detectors both …

In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …

In 1959, Lawson and co-workers publication triggered development of variable band gap Hg
1− x Cd x Te (HgCdTe) alloys providing an unprecedented degree of freedom in infrared …