Roadmap of spin–orbit torques

Q Shao, P Li, L Liu, H Yang, S Fukami… - IEEE transactions on …, 2021‏ - ieeexplore.ieee.org
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

H Wang, H Wu, J Zhang, Y Liu, D Chen… - Nature …, 2023‏ - nature.com
Abstract Two-dimensional (2D) ferromagnetic materials with unique magnetic properties
have great potential for next-generation spintronic devices with high flexibility, easy …

Switching of perpendicular magnetization by spin–orbit torque

L Zhu - Advanced Materials, 2023‏ - Wiley Online Library
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for
the development of nonvolatile magnetic memory and computing technologies due to their …

[HTML][HTML] Maximizing spin-orbit torque generated by the spin Hall effect of Pt

L Zhu, DC Ralph, RA Buhrman - Applied Physics Reviews, 2021‏ - pubs.aip.org
Efficient generation of spin–orbit torques is central for the exciting field of spin-orbitronics.
Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider …

Low‐power and field‐free perpendicular magnetic memory driven by topological insulators

B Cui, A Chen, X Zhang, B Fang, Z Zeng… - Advanced …, 2023‏ - Wiley Online Library
Giant spin–orbit torque (SOT) from topological insulators (TIs) has great potential for low‐
power SOT‐driven magnetic random‐access memory (SOT‐MRAM). In this work, a …

Prospect of spin-orbitronic devices and their applications

Y Cao, G **ng, H Lin, N Zhang, H Zheng, K Wang - IScience, 2020‏ - cell.com
Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …

Spin‐orbit torque in Van der Waals‐layered materials and heterostructures

W Tang, H Liu, Z Li, A Pan, YJ Zeng - Advanced Science, 2021‏ - Wiley Online Library
Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical
manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency …

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022‏ - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates

NHD Khang, S Nakano, T Shirokura, Y Miyamoto… - Scientific reports, 2020‏ - nature.com
The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power
spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) …

Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance

Q Pan, Y Liu, H Wu, P Zhang, H Huang… - Advanced Electronic …, 2022‏ - Wiley Online Library
Recent advances in using topological insulators (TIs) with ferromagnets (FMs) at room
temperature have opened an innovative avenue in spin‐orbit torque (SOT) nonvolatile …