[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Energy band adjustment in a reliable novel charge plasma SiGe source TFET to intensify the BTBT rate
The energy band of a novel Si 0.7 Ge 0.3 source tunneling field-effect transistor (TFET) is
successfully adjusted and sharply bent without any physical formation of metallurgical …
successfully adjusted and sharply bent without any physical formation of metallurgical …
Investigation of short channel effects in SOI MOSFET with 20 nm channel length by a β-Ga2O3 layer
This paper presented a fully depleted silicon on insulator (FD-SOI) MOSFET in nano scale
size with deployment the quasi two dimensional β-Ga 2 O 3 material to improvement …
size with deployment the quasi two dimensional β-Ga 2 O 3 material to improvement …
[HTML][HTML] A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics
Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-
FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of I on/I off …
FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of I on/I off …
Improvement of electrical performance in heterostructure junctionless TFET based on dual material gate
H **e, H Liu, S Wang, S Chen, T Han, W Li - Applied Sciences, 2019 - mdpi.com
In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect
transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe …
transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe …
A simulation study of junctionless double-gate metal-oxide-semiconductor field-effect transistor with symmetrical side gates
This study simulated the structure of a Junctionless (JL) Double-Gate (DG) Metal Oxide
Semiconductor Field Effect Transistor (MOSFET) with symmetrical Side Gates (SG) and …
Semiconductor Field Effect Transistor (MOSFET) with symmetrical Side Gates (SG) and …
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
Exploration and development of tri-gate quantum well barrier FinFET with strained nanosystem channel for enhanced performance
With FinFETs scaled below 20 nm technology nodes, nanodevices are not immune to Short
Channel Effects (SCEs) leading to reduced carrier mobility, transconductance and finally …
Channel Effects (SCEs) leading to reduced carrier mobility, transconductance and finally …
A nanoscale junctionless FET to amend the electric field distribution using a β-Ga2O3 packet
This paper describes a junctionless double-gate FET at nanoscale dimensions that utilizes a
ß-Ga2O3 packet to improve and amend the electric field at the device's beginning and in the …
ß-Ga2O3 packet to improve and amend the electric field at the device's beginning and in the …
Design of a novel high-sensitive SOI-Junctionless BioFET overcoming sensitivity degradation problems
For the first time, a new configuration of label-free junctionless semiconductor device is
proposed to boost sensitivity in the identification of biomolecule specifies. Instead of creating …
proposed to boost sensitivity in the identification of biomolecule specifies. Instead of creating …