GaN-based semiconductors are deemed to be a potential candidate for develo**
spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie …

A key concept in the emerging field of spintronics is the voltage-gate control of spin
precession via the effective magnetic field generated by the Rashba spin–orbit coupling …

A detailed derivation of the Rashba spin-orbit (SO) Hamiltonian for conduction electrons in
wurtzite heterostructures is lacking in the literature. Here we derive in a consistent and …

Recently there has been a rapid domestic development in group III nitride semiconductor
electronic materials and devices. This paper reviews the important progress in GaN-based …

The Rashba spin-orbit interaction effective field is always in the plane of the two-
dimensional electron gas and perpendicular to the carrier wavevector but the direction of the …

Electronic transport in a one-dimensional mesoscopic ring threaded by a magnetic flux is
studied in the presence of Rashba and Dresselhaus spin-orbit interactions. A completely …

The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by
magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a …

Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum
phenomena and high-speed optoelectronic applications. The circular photogalvanic effect …

Two-dimensional (2D) electron systems with a combined Rashba and Dresselhaus spin-
orbit interaction (SOI) having a complicated energy spectrum with a conical point and four …

An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is
proposed. The advantage of using a convex quantum wells structure is that the radiation …