[HTML][HTML] Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

YQ Fu, JK Luo, NT Nguyen, AJ Walton… - Progress in Materials …, 2017 - Elsevier
Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN)
have found a broad range of lab-on-chip applications such as biosensing, particle/cell …

Aluminium nitride integrated photonics: a review

N Li, CP Ho, S Zhu, YH Fu, Y Zhu, LYT Lee - Nanophotonics, 2021 - degruyter.com
Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide
compact solution for functional devices, and its fabrication process is compatible with the …

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

V Cimalla, J Pezoldt, O Ambacher - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

X Guo, X Ji, B Yao, T Tan, A Chu, O Westreich… - …, 2023 - degruyter.com
Silicon photonics has gained great success mainly due to the promise of realizing compact
devices in high volume through the low-cost foundry model. It is burgeoning from laboratory …

Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems

S Fichtner, N Wolff, G Krishnamurthy… - Journal of Applied …, 2017 - pubs.aip.org
Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al 1–x
Sc x N is a promising approach to improve the performance of piezoelectric micro …

Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview

MA Fraga, H Furlan, RS Pessoa, M Massi - Microsystem technologies, 2014 - Springer
The use of wide bandgap semiconductor thin films as sensing materials for micro-electrical–
mechanical systems (MEMS) sensors has been the subject of much discussion in the …

Do** effects on the ferroelectric properties of wurtzite nitrides

Z Liu, X Wang, X Ma, Y Yang, D Wu - Applied Physics Letters, 2023 - pubs.aip.org
Ferroelectric materials have been explored for a long time for easy integration with state-of-
the-art semiconductor technologies. Doped wurtzite nitrides have been reported as …

Flexible-CMOS and biocompatible piezoelectric AlN material for MEMS applications

N Jackson, L Keeney… - Smart Materials and …, 2013 - iopscience.iop.org
The development of a CMOS compatible flexible piezoelectric material is desired for
numerous applications and in particular for biomedical MEMS devices. Aluminum nitride …

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

HY Liu, GS Tang, F Zeng, F Pan - Journal of crystal growth, 2013 - Elsevier
A series of AlN films were deposited on (100) silicon substrate at room temperature with
varying deposition conditions, ie, nitrogen concentration in sputtering gases (N2/(N2+ Ar)) …

Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films

Y Lu, M Reusch, N Kurz, A Ding… - … status solidi (a), 2018 - Wiley Online Library
Reactive pulsed DC magnetron co‐sputtering is used to grow piezoelectric aluminum nitride
(AlN) and aluminum scandium nitride (AlScN) thin films on Si (001) substrates. By using …