[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
Spin torque nano-oscillators based on antiferromagnetic skyrmions
L Shen, J **_Spin-Torque_Written_Magnetic_Random_Access_Memory_Cells/links/0912f50f8565036de8000000/A-Three-Terminal-Approach-to-Develo**-Spin-Torque-Written-Magnetic-Random-Access-Memory-Cells.pdf?_sg%5B0%5D=started_experiment_milestone&origin=journalDetail" data-clk="hl=tr&sa=T&oi=gga&ct=gga&cd=5&d=16468846686343469840&ei=UJGtZ-LKCZbO6rQP6tvC0A0" data-clk-atid="EBvfN84YjeQJ" target="_blank">[PDF] researchgate.net
A three-terminal approach to develo** spin-torque written magnetic random access memory cells
Using a self-aligned fabrication process together with multiple-step aligned electron beam
lithography, we have developed a nanopillar structure where a third contact can be made to …
lithography, we have developed a nanopillar structure where a third contact can be made to …
Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions
X Lou, Z Gao, DV Dimitrov, MX Tang - Applied Physics Letters, 2008 - pubs.aip.org
Multilevel cell is an important concept to improve the density of spin transfer torque memory.
We demonstrated two-bit multilevel cell spin transfer switching using MgO-based magnetic …
We demonstrated two-bit multilevel cell spin transfer switching using MgO-based magnetic …
Reduction of the spin-torque critical current by partially canceling the free layer demagnetization field
We significantly reduce the critical current I c 0 for the onset of spin torque switching of the
free layer in nanometer-scale in-plane magnetized spin valves by partially cancelling its …
free layer in nanometer-scale in-plane magnetized spin valves by partially cancelling its …
Ultrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin current pulse
We report on spin valve devices that incorporate both an out-of-plane polarizer (OPP) to
quickly excite spin torque (ST) switching and an in-plane polarizer/analyzer (IPP). For …
quickly excite spin torque (ST) switching and an in-plane polarizer/analyzer (IPP). For …
Spin-torque-driven ballistic precessional switching with 50 ps impulses
We demonstrate reliable spin-torque-driven ballistic precessional switching using 50 ps
current impulses in a spin-valve device that includes both in-plane and out-of-plane spin …
current impulses in a spin-valve device that includes both in-plane and out-of-plane spin …