Ultraviolet detectors based on wide bandgap semiconductor nanowire: A review

Y Zou, Y Zhang, Y Hu, H Gu - Sensors, 2018 - mdpi.com
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to
their extensive applications in the civil and military fields. Wide bandgap semiconductor …

Recent advances in transition metal nitride‐based materials for photocatalytic applications

Z Cheng, W Qi, CH Pang, T Thomas… - Advanced Functional …, 2021 - Wiley Online Library
Photocatalysis is a promising and convenient strategy to convert solar energy into chemical
energy for various fields. However, photocatalysis still suffers from low solar energy …

III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis

Y Wu, X Liu, A Pandey, P Zhou, WJ Dong… - Progress in Quantum …, 2022 - Elsevier
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

III-Nitride nanowire optoelectronics

S Zhao, HPT Nguyen, MG Kibria, Z Mi - Progress in Quantum Electronics, 2015 - Elsevier
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

III–V nanowires and nanowire optoelectronic devices

Y Zhang, J Wu, M Aagesen, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications

C Zhao, N Alfaraj, RC Subedi, JW Liang… - Progress in Quantum …, 2018 - Elsevier
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges

MG Kibria, Z Mi - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Artificial photosynthesis, ie the chemical transformation of sunlight, water and carbon dioxide
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …

Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer

Y Alaskar, S Arafin, D Wickramaratne… - Advanced Functional …, 2014 - Wiley Online Library
Van der Waals growth of GaAs on silicon using a two‐dimensional layered material,
graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer …

Nonpolar InGaN/GaN core–shell single nanowire lasers

C Li, JB Wright, S Liu, P Lu, JJ Figiel, B Leung… - Nano …, 2017 - ACS Publications
We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pum** at room temperature. The nanowire lasers were …

Semiconductor plasmonic nanolasers: current status and perspectives

S Gwo, CK Shih - Reports on Progress in Physics, 2016 - iopscience.iop.org
Scaling down semiconductor lasers in all three dimensions holds the key to the
development of compact, low-threshold, and ultrafast coherent light sources, as well as …