Ultraviolet detectors based on wide bandgap semiconductor nanowire: A review
Y Zou, Y Zhang, Y Hu, H Gu - Sensors, 2018 - mdpi.com
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to
their extensive applications in the civil and military fields. Wide bandgap semiconductor …
their extensive applications in the civil and military fields. Wide bandgap semiconductor …
Recent advances in transition metal nitride‐based materials for photocatalytic applications
Photocatalysis is a promising and convenient strategy to convert solar energy into chemical
energy for various fields. However, photocatalysis still suffers from low solar energy …
energy for various fields. However, photocatalysis still suffers from low solar energy …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges
Artificial photosynthesis, ie the chemical transformation of sunlight, water and carbon dioxide
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer
Van der Waals growth of GaAs on silicon using a two‐dimensional layered material,
graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer …
graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer …
Nonpolar InGaN/GaN core–shell single nanowire lasers
We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pum** at room temperature. The nanowire lasers were …
nanowire lasers by optical pum** at room temperature. The nanowire lasers were …
Semiconductor plasmonic nanolasers: current status and perspectives
Scaling down semiconductor lasers in all three dimensions holds the key to the
development of compact, low-threshold, and ultrafast coherent light sources, as well as …
development of compact, low-threshold, and ultrafast coherent light sources, as well as …