At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

In this review, the recent developments in microelectronics, spintronics, and magnonics
have been summarized and compared. Firstly, the history of the spintronics has been briefly …

We report enhanced tunnel magnetoresistance (TMR) ratios of 188%(308%) at room
temperature and 328%(479%) at 15 K for cation-site-disordered MgAl 2 O 4-barrier …

In the field of spintronics, there is a strong demand for barrier materials in magnetic tunnel
junctions (MTJs) having high tunnel magnetoresistance (TMR) and low resistance area …

We assess the potential of the ferrimagnetic spinel ferrites CoFe 2 O 4 and NiFe 2 O 4 to act
as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic …

The inverse spinel ferrimagnetic NiCo 2 O 4 possesses high magnetic Curie temperature
TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the …

Epitaxial magnetic tunnel junctions (MTJs) with a Co 2 FeAl/CoFe (0.5 nm)/MgAl 2 O 4/Co 2
FeAl (001) structure were fabricated by magnetron sputtering. High-temperature in situ …

We developed a fabrication process of an epitaxial MgAl 2 O 4 barrier for magnetic tunnel
junctions (MTJs) using a direct sputtering method from an MgAl 2 O 4 spinel sintered target …

Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B2-
Co 2 FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by …

Double-barrier heterostructures are model systems for the study of electron tunneling and
discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in …