A review on current status and mechanisms of room-temperature magnetoelectric coupling in multiferroics for device applications

R Gupta, RK Kotnala - Journal of Materials Science, 2022 - Springer
Magnetoelectric coupling phenomenon in multiferroics has attracted considerable research
activities in the last decade due to its wide range of applications in spintronic, data storage …

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Магнитоэлектрические материалы и мультиферроики

АП Пятаков, АК Звездин - Успехи физических наук, 2012 - mathnet.ru
АППятаков, АКЗвездин, “Магнитоэлектрические материалы и мультиферроики”, УФН,
182:6 (2012), 593–620; Phys. Usp., 55:6 (2012), 557–581 Успехи физических наук RUS …

Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Magnetoelectric and multiferroic media

AP Pyatakov, AK Zvezdin - Physics-Uspekhi, 2012 - iopscience.iop.org
The last decade has witnessed a significant growth of research into materials with coupled
magnetic and electric properties. Reviewed here are the main types and mechanisms of …

Magnetoelectric coupling effects in multiferroic complex oxide composite structures

CAF Vaz, J Hoffman, CH Ahn, R Ramesh - Advanced materials, 2010 - Wiley Online Library
The study of magnetoelectric materials has recently received renewed interest, in large part
stimulated by breakthroughs in the controlled growth of complex materials and by the search …

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

T Maruyama, Y Shiota, T Nozaki, K Ohta, N Toda… - Nature …, 2009 - nature.com
In the field of spintronics, researchers have manipulated magnetization using spin-polarized
currents,,. Another option is to use a voltage-induced symmetry change in a ferromagnetic …

Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

S Liu, X Yuan, Y Zou, Y Sheng, C Huang… - npj 2D Materials and …, 2017 - nature.com
Recently, layered two-dimensional ferromagnetic materials (2D FMs) have attracted a great
deal of interest for develo** low-dimensional magnetic and spintronic devices …

Magnetoelectric devices for spintronics

S Fusil, V Garcia, A Barthélémy… - Annual Review of …, 2014 - annualreviews.org
The control of magnetism by electric fields is an important goal for the future development of
low-power spintronics. Various approaches have been proposed on the basis of either …

Ferroelectric control of spin polarization

V Garcia, M Bibes, L Bocher, S Valencia, F Kronast… - Science, 2010 - science.org
A current drawback of spintronics is the large power that is usually required for magnetic
writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled …