Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …

A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …

Due to the advanced properties of layered 2D materials, their heterostructuring with
conventional 3D semiconductors is one of the promising ways to design efficient and …

Dark current characteristics of germanium (Ge) vertical pin photodetectors were studied. Ge
photodetectors were demonstrated on the germanium-on-insulator (GOI) platforms realized …

The demand on broadband near-infrared photodetections with high responsivity is
becoming increasingly eminent; however its realization remains a significant technological …

Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-
insulator substrates are universally regarded as key enablers towards chip-scale …

In this Letter, we demonstrate mid-infrared (MIR) lateral p− i− n GeSn waveguide
photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key …

Silicon photonics is emerging as a competitive platform for electronic–photonic integrated
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …

Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …