This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

We present a wafer‐level heterointegrated indium phosphide double heterobipolar
transistor on silicon germanium bipolar‐complementary metal oxide semiconductor (InP …

This paper presents a 330 GHz hetero-integrated signal source using InP-on-BiCMOS
technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 μm …

This report provides a review of the heterogeneous integration of different types of devices
and materials for the purpose of increasing the functional density and therefore the …

Applications such as radar imaging and wideband communications are driving the research
on millimeter-wave circuits. For some applications SiGe hetero junction bipolar transistors …

In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous
integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si …

Indium phosphide double-heterobipolar transistor (InP DHBT) technologies are finding
wider use in mm-and sub-mmwave applications today, owing to the material properties of …

Abstract (Ga, In)(As, Sb)-based InP double heterojunction bipolar transistors (DHBTs) exhibit
excellent RF performance combined with a high power handling capability, making them …

A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs
heterojunction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR) …

We introduce an approach that combines a 3” InP-DHBT transferred-substrate process with
a SiGe-BiCMOS process. First, silicon and InP wafers are processed separately in different …