Interface of gallium-based liquid metals: oxide skin, wetting, and applications

JH Kim, S Kim, MD Dickey, JH So, HJ Koo - Nanoscale Horizons, 2024 - pubs.rsc.org
Gallium-based liquid metals (GaLMs) are promising for a variety of applications-especially
as a component material for soft devices-due to their fluidic nature, low toxicity and reactivity …

Electronic skins based on liquid metals

J Yang, W Cheng, K Kalantar-Zadeh - Proceedings of the IEEE, 2019 - ieeexplore.ieee.org
The implementation and exploration of liquid metals for soft electronics, especially electronic
skins (e-skins), are fast increasing. The growing field has received special attention since …

3D-printed flexible organic light-emitting diode displays

R Su, SH Park, X Ouyang, SI Ahn, MC McAlpine - Science advances, 2022 - science.org
The ability to fully 3D-print active electronic and optoelectronic devices will enable unique
device form factors via strategies untethered from conventional microfabrication facilities …

Are contact angle measurements useful for oxide-coated liquid metals?

ID Joshipura, KA Persson, VK Truong, JH Oh, M Kong… - Langmuir, 2021 - ACS Publications
This work establishes that static contact angles for gallium-based liquid metals have no
utility despite the continued and common use of such angles in the literature. In the …

The fabrication, characterization and functionalization in molecular electronics

Y Zhao, W Liu, J Zhao, Y Wang, J Zheng… - … Journal of Extreme …, 2022 - iopscience.iop.org
Developments in advanced manufacturing have promoted the miniaturization of
semiconductor electronic devices to a near-atomic scale, which continuously follows the'top …

Bipolar resistive switching in junctions of gallium oxide and p-type silicon

MN Almadhoun, M Speckbacher, BC Olsen… - Nano Letters, 2021 - ACS Publications
In this work, native GaO x is positioned between bulk gallium and degenerately doped p-
type silicon (p+-Si) to form Ga/GaO x/SiO x/p+-Si junctions. These junctions show memristive …

Boosting the solar cell efficiency by flexo-photovoltaic effect?

H Zou, C Zhang, H Xue, Z Wu, ZL Wang - ACS nano, 2019 - ACS Publications
The photovoltaic effect in p− n junctions has been widely studied and used to work as
renewable energy sources for portable devices and various appliances. Due to the band …

Rectification ratio and tunneling decay coefficient depend on the contact geometry revealed by in situ imaging of the formation of EGaIn junctions

X Chen, H Hu, J Trasobares… - ACS applied materials & …, 2019 - ACS Publications
This paper describes how the intensive (tunneling decay coefficient β and rectification ratio
R) and extensive (current density J) properties of Ag–S (CH2) n− 1CH3//GaO x/EGaIn …

N-heterocyclic carbenes for the self-assembly of thin and highly insulating monolayers with high quality and stability

A Krzykawska, M Wróbel, K Kozieł, P Cyganik - ACS nano, 2020 - ACS Publications
As an organic nanostructure, self-assembled monolayers (SAMs) play a central role in many
aspects of nanotechnology, including molecular electronics. In this work, we show that SAMs …

Solid-state protein junctions: Cross-laboratory study shows preservation of mechanism at varying electronic coupling

S Mukhopadhyay, SK Karuppannan, C Guo, JA Fereiro… - Iscience, 2020 - cell.com
Successful integration of proteins in solid-state electronics requires contacting them in a non-
invasive fashion, with a solid conducting surface for immobilization as one such contact. The …