Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

Group-IV GeSn alloys have emerged as a promising platform for short-wave infrared (SWIR)
photodetection and imaging, owing to their tunable bandgap and compatibility with standard …

Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …

Complementary metal oxide semiconductor-compatible short-and midwave infrared emitters
are highly coveted for the monolithic integration of silicon-based photonic and electronic …

Silicon-compatible short-and midwave infrared emitters are highly sought after for on-chip
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …

Ge 1-x Sn x alloy has emerged as a promising material for complementary metal-oxide
semiconductor (CMOS) compatible mid-infrared photodetectors (PDs). In addition to its …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

As a representative of new semiconductor nanostructured materials, the Si0. 7Ge0. 3/Si
multilayers have received extensive attention for electronic and photonic applications. We …

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …

GeSn compounds have made many interesting contributions in photodetectors (PDs) over
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …