Linearization techniques for CMOS low noise amplifiers: A tutorial
This tutorial catalogues and analyzes previously reported CMOS low noise amplifier (LNA)
linearization techniques. These techniques comprise eight categories: a) feedback; b) …
linearization techniques. These techniques comprise eight categories: a) feedback; b) …
A comparative overview of microwave and wireless power-amplifier behavioral modeling approaches
This paper presents a comparative overview of the most important approaches presented to
address the behavioral modeling of microwave and wireless power amplifiers (PAs). Starting …
address the behavioral modeling of microwave and wireless power amplifiers (PAs). Starting …
[ספר][B] Intermodulation distortion in microwave and wireless circuits
JC Pedro, NB Carvalho - 2003 - books.google.com
Annotation" Intermodulation Distortion in Microwave and Wireless Circuits presents the full
range of distortion specs to help practitioners select the right telecommunications equipment …
range of distortion specs to help practitioners select the right telecommunications equipment …
Behavioral modeling of nonlinear RF power amplifiers considering memory effects
This paper proposes a new behavioral model to treat memory effects in nonlinear power
amplifiers (PAs). Phenomena such as asymmetries in lower and upper intermodulation …
amplifiers (PAs). Phenomena such as asymmetries in lower and upper intermodulation …
A comparative analysis of behavioral models for RF power amplifiers
A comparative study of nonlinear behavioral models with memory for radio-frequency power
amplifier (PAs) is presented. The models are static polynomial, parallel Hammerstein (PH) …
amplifier (PAs) is presented. The models are static polynomial, parallel Hammerstein (PH) …
Josephson parametric amplifier with Chebyshev gain profile and high saturation
We demonstrate a Josephson parametric amplifier design with a band-pass impedance-
matching network based on a third-order Chebyshev prototype. We measured eight …
matching network based on a third-order Chebyshev prototype. We measured eight …
A comprehensive analysis of IMD behavior in RF CMOS power amplifiers
This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD)
behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small …
behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small …
Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design
This paper presents a nonlinear equivalent circuit model of microwave power GaN high
electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic …
electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic …
Integrated bias circuits of RF CMOS cascode power amplifier for linearity enhancement
B Koo, Y Na, S Hong - IEEE Transactions on Microwave Theory …, 2012 - ieeexplore.ieee.org
This paper presents a highly linear differential cascode CMOS power amplifier (PA) with
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …
Effect of baseband impedance on FET intermodulation
The intermodulation performance of an FET in the common-source configuration is
dependent on the impedance presented to its gate and drain terminals, not only at …
dependent on the impedance presented to its gate and drain terminals, not only at …