A junctionless nanowire transistor with a dual-material gate
A dual-material-gate junctionless nanowire transistor (DMG-JNT) is proposed in this paper.
Its characteristic is demonstrated and compared with a generic single-material-gate JNT …
Its characteristic is demonstrated and compared with a generic single-material-gate JNT …
A Dual-Material Gate Junctionless Transistor With High- Spacer for Enhanced Analog Performance
RK Baruah, RP Paily - IEEE Transactions on electron devices, 2013 - ieeexplore.ieee.org
In this paper, we present a simulation study of analog circuit performance parameters for a
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …
A quasi-two-dimensional threshold voltage model for short-channel junctionless double-gate MOSFETs
TK Chiang - IEEE Transactions on Electron Devices, 2012 - ieeexplore.ieee.org
Based on the bulk conduction mode of the quasi-2-D scaling theory, an analytical threshold
voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for …
voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for …
Semianalytical model of the subthreshold current in short-channel junctionless symmetric double-gate field-effect transistors
A Gnudi, S Reggiani, E Gnani… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric
double-gate field-effect transistors in subthreshold regime is proposed, which is based on …
double-gate field-effect transistors in subthreshold regime is proposed, which is based on …
A highly scalable junctionless FET leaky integrate-and-fire neuron for spiking neural networks
In this article, a highly scalable and CMOS compatible double-gate junctionless field-effect
transistor (DG-JLFET)-based leaky integrate-and-fire (LIF) neuron is presented for the sub …
transistor (DG-JLFET)-based leaky integrate-and-fire (LIF) neuron is presented for the sub …
Design of resistive load inverter and common source amplifier circuits using symmetric and asymmetric nanowire FETs
VB Sreenivasulu, NA Kumari, V Lokesh… - Journal of Electronic …, 2023 - Springer
In this paper, multi-channel nanowire (NW) performance is significantly improved by
symmetric and asymmetric spacer length optimization. Device performance metrics …
symmetric and asymmetric spacer length optimization. Device performance metrics …
Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
In recent times, FET-based sensors have been widely used in industrial and domestic
applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded …
applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded …
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
This paper proposes a drain current model for triple-gate n-type junctionless nanowire
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
Threshold voltage in junctionless nanowire transistors
This work presents a physically based analytical model for the threshold voltage in
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
Analytical modeling of channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like do** profile
This paper proposes an analytical 2-D model for the channel potential and threshold voltage
of double-gate junctionless FETs with a vertical Gaussian-like do** profile. The 2-D …
of double-gate junctionless FETs with a vertical Gaussian-like do** profile. The 2-D …