An investigation of high performance heterojunction silicon solar cell based on n-type si substrate

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Effect of defects on high efficient perovskite solar cells

S Taheri, M Minbashi, A Hajjiah - Optical Materials, 2021 - Elsevier
The organic-inorganic hybrid halide perovskite solar cell has been studied theoretically in
this paper. For the validation cases, an experimental case is used for comparison with our …
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Enhanced photovoltaic performance of PEDOT: PSS/Si heterojunction solar cell with ZnO BSF layer: A simulation study using SCAPS-1D

P Kumari, U Punia, D Sharma, A Srivastava… - Silicon, 2023 - Springer
Here, we report an enhanced photovoltaic (PV) performance including open circuit voltage
(V oc), short circuit current (J sc), fill factor (FF) and power conversion efficiency (PCE) of …
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Guidelines for a highly efficient CuI/n-Si heterojunction solar cell

J Hossain, M Rahman, MMA Moon… - Engineering …, 2020 - iopscience.iop.org
We report the simulation outcomes of a highly efficient CuI/n-Si heterojunction solar cell
(HJSC) by SCAPS-1D simulator using the parameters obtained from spin-coated CuI thin …
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[PDF] academia.edu

Electrical and optical characterization of sprayed In2S3 thin films as an electron transporting layer in high efficient perovskite solar cells

M Hashemi, M Minbashi, SMB Ghorashi, A Ghobadi… - Solar Energy, 2021 - Elsevier
This study represents the investigation of In 2 S 3 thin films, which have been deposited with
different Indium salts (Chloride, Acetate, and Nitrate) using the Chemical Spray Pyrolysis …
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A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

M Hashemi, M Minbashi, SMB Ghorashi, A Ghobadi - Scientific reports, 2021 - nature.com
This study represents the investigation of In2S3 thin films as an electron transport layer in
the CuBaSn (S, Se)-CBT (S, Se) solar cells, which have been deposited using the Chemical …
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Effect of boron do** and phosphorus do** on temperature-dependent fluorescence spectra of silicon substrate

W Longlong, Z Wenguang, Z Lianshui… - Journal of Hebei …, 2018 - xbzrb.hbu.edu.cn
Phosphorus-doped and boron-doped silicon wafers were obtained by in-situ do** on Si
(110) substrates. In this paper, the fluorescence spectra of intrinsic, phosphorus-doped and …
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硼掺杂和磷掺杂对硅衬底的变温荧光光谱特性的影响

王龙龙， 周文广， 张连水， **晓莉， 周川… - 河北大学学报 (自然 …, 2018 - xbzrb.hbu.edu.cn
在Si (110) 衬底上通过原位掺杂的方法可得到磷掺杂和硼掺杂硅片. 测量了本征,
磷掺杂和硼掺杂硅片的变温荧光光谱, 研究了不同温度时杂质对硅片性质的影响 …
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