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Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …
properties of electrical conductivity and optical transparency. They are being widely used as …
A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
Printable semiconductors for backplane TFTs of flexible OLED displays
Studies on printable semiconductors and technologies have increased rapidly over recent
decades, pioneering novel applications in many fields, such as energy, sensing, logic …
decades, pioneering novel applications in many fields, such as energy, sensing, logic …
Overview of recent progress in electrohydrodynamic jet printing in practical printed electronics: focus on the variety of printable materials for each component
Printed electronics will be essential in the implementation of next-generation electronic
devices, because printing facilitates fabrication of devices on various rigid, thin, or flexible …
devices, because printing facilitates fabrication of devices on various rigid, thin, or flexible …
High-performance indium-based oxide transistors with multiple channels through nanolaminate structure fabricated by plasma-enhanced atomic layer deposition
An atomic-layer-deposited oxide nanolaminate (NL) structure with 3 dyads where a single
dyad consists of a 2-nm-thick confinement layer (CL)(In0. 84Ga0. 16O or In0. 75Zn0. 25O) …
dyad consists of a 2-nm-thick confinement layer (CL)(In0. 84Ga0. 16O or In0. 75Zn0. 25O) …
Heterojunction oxide thin film transistors: A review of recent advances
J Lee, DS Chung - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
In the last decades, oxide thin-film transistors (TFTs) have been extensively developed for
optoelectronic applications owing to their outstanding electrical properties, such as excellent …
optoelectronic applications owing to their outstanding electrical properties, such as excellent …
Solution-processed metal-oxide thin-film transistors: A review of recent developments
R Chen, L Lan - Nanotechnology, 2019 - iopscience.iop.org
Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs)
based on metal-oxide (MO) semiconductors have drawn great attention during recent years …
based on metal-oxide (MO) semiconductors have drawn great attention during recent years …
Advances in mobility enhancement of ITZO thin-film transistors: a review
Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving
high mobility and offers significant opportunities for commercialization. This paper provides …
high mobility and offers significant opportunities for commercialization. This paper provides …
Synergistically enhanced performance and reliability of abrupt metal‐oxide heterojunction transistor
The large‐area low‐temperature processing capability and versatile characteristics of
amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to …
amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to …