Prospects of spintronics based on 2D materials

YP Feng, L Shen, M Yang, A Wang… - Wiley …, 2017‏ - Wiley Online Library
Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …

Prospects and opportunities of 2D van der Waals magnetic systems

MC Wang, CC Huang, CH Cheung, CY Chen… - Annalen der …, 2020‏ - Wiley Online Library
The existence of spontaneous magnetization in low dimensional magnetic systems has
attracted intensive studies since the early 60s and research remains very active even now …

[HTML][HTML] Current progress of magnetoresistance sensors

S Yang, J Zhang - Chemosensors, 2021‏ - mdpi.com
Magnetoresistance (MR) is the variation of a material's resistivity under the presence of
external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common …

Band Alignment Transition and Enhanced Performance in Vertical SnS2/MoS2 van der Waals Photodetectors

M Shi, Y Lv, G Wu, J Cho, M Abid… - … applied materials & …, 2024‏ - ACS Publications
The strong light–matter interaction and naturally passivated surfaces of van der Waals
materials make heterojunctions of such materials ideal candidates for high-performance …

Ferromagnetism and insulating behavior with a logarithmic temperature dependence of resistivity in Pb10−xCux(PO4)6O

Y Zhang, C Liu, X Zhu, HH Wen - Science China Physics, Mechanics & …, 2024‏ - Springer
Recent claim of discovering above-room-temperature superconductivity (T c≈ 400 K) at
ambient pressure in copper doped apatite Pb10 (PO4) 6O has stimulated world-wide …

Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS2 and Yttrium Iron Garnet

B Peng, Q Li, X Liang, P Song, J Li, K He, D Fu, Y Li… - ACS …, 2017‏ - ACS Publications
Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of
spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D …

Graphene on cubic-SiC

AN Chaika, VY Aristov, OV Molodtsova - Progress in Materials Science, 2017‏ - Elsevier
The outstanding properties of graphene make it a top candidate for replacing silicon in future
electronic devices. However, for technological applications, graphene must be synthesized …

Correlation between Nanoscale Domain Structures and Superconducting Phase Transitions in Highly Crystalline 2D Superconductors

L Wang, C Xu, Z Liu, Z Liu, Z Yang… - Advanced electronic …, 2023‏ - Wiley Online Library
The domains and domain boundaries in 2D materials are known to play essential roles in
investigating intriguing physical properties and have potential applications in nanoscale …

Layer-by-layer graphene growth on β-SiC/Si (001)

VY Aristov, AN Chaika, OV Molodtsova, SV Babenkov… - ACS …, 2018‏ - ACS Publications
The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si
(001) substrate is uncovered using high-resolution core-level and angle-resolved …

Effect of boron and nitrogen additives on structure and transport properties of arc-produced carbon

OV Sedelnikova, YV Fedoseeva, AI Romanenko… - Carbon, 2019‏ - Elsevier
We have studied the effect of introduction of boron, nitrogen or both elements into an electric
arc on the morphology and the conductivity of the resultant carbon products. Scanning and …