Long-Lived Excitations in Wide Quantum Wells
Time-resolved photoluminescence (PL) measurements in wide (15 and 25 nm)(In, Ga) N/Ga
N quantum well light-emitting diodes (LEDs) reveal that photoexcited charge carriers …
N quantum well light-emitting diodes (LEDs) reveal that photoexcited charge carriers …
Light emission at reverse voltage in a wide-well light-emitting diode
This study examines the effects of negative voltage pulses (NVPs) on emission from (In, Ga)
N/Ga N light-emitting diodes (LEDs) with a wide quantum well in the active layer. For low dc …
N/Ga N light-emitting diodes (LEDs) with a wide quantum well in the active layer. For low dc …
Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions
In nitride‐based laser diodes, the poor conductivity of the p‐type region, higher light
absorption, and the difficult processing of an ohmic p‐contact with low resistance are major …
absorption, and the difficult processing of an ohmic p‐contact with low resistance are major …