Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics
The commercial success of radio-frequency acoustic filters in wireless communication
systems has launched aluminum nitride (AlN) as one of the most widely used …
systems has launched aluminum nitride (AlN) as one of the most widely used …
Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
Modeling hardness of polycrystalline materials and bulk metallic glasses
Though extensively studied, hardness, defined as the resistance of a material to
deformation, still remains a challenging issue for a formal theoretical description due to its …
deformation, still remains a challenging issue for a formal theoretical description due to its …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Piezoelectric coefficients and spontaneous polarization of ScAlN
We present a computational study of spontaneous polarization and piezoelectricity in Sc x Al
1− x N alloys in the compositional range from x= 0 to x= 0.5, obtained in the context of …
1− x N alloys in the compositional range from x= 0 to x= 0.5, obtained in the context of …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
[LLIBRE][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
[LLIBRE][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
AF Wright - Journal of Applied physics, 1997 - pubs.aip.org
Virtually all epitaxial AlN, GaN, and InN films are expected to contain some amount of
residual strain due to differences in the film and substrate lattice constants and in their …
residual strain due to differences in the film and substrate lattice constants and in their …
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
We present the results of room-and low-temperature measurements of second-order Raman
scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly …
scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly …