A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-do**
A new δ-doped cylindrical gate silicon tunnel FET (DCG-TFET) analytical model is
developed and investigated extensively, with the aim of addressing the challenges of the …
developed and investigated extensively, with the aim of addressing the challenges of the …
An analytical model of the surface-potential-based source-pocket-doped cylindrical-gate tunnel FET with a work-function-modulated metal gate
A new surface-potential-based analytical model for a source-pocket-doped cylindrical-gate
tunnel field-effect transistor (FET) with a work-function-modulated metal gate is proposed …
tunnel field-effect transistor (FET) with a work-function-modulated metal gate is proposed …
Design and Investigation of Junctionless N+ Pocket Doped Vertical-TFET with Binary Metal Alloy
In this manuscript, the virtue of linear graded gate electrodes and SiGe heterojunction is
utilized to design junctionless vertical TFET to achieve higher performance. A binary metal …
utilized to design junctionless vertical TFET to achieve higher performance. A binary metal …
Current switching ratio optimization using dual pocket do** engineering
This paper presents a smart idea to maximize current switching ratio of cylindrical gate
tunnel FET (CGT) by growing pocket layers in both source and channel region. The pocket …
tunnel FET (CGT) by growing pocket layers in both source and channel region. The pocket …
[PDF][PDF] Technology and properties of GaAs do** superlattices
B Ściana, D Radziewicz, D Pucicki… - Materials …, 2008 - materialsscience.pwr.wroc.pl
Heterojunction and do** superlattices are widely used in many advanced semiconductor
devices such as resonant tunnelling diodes, optical modulators, cascade lasers, tunable …
devices such as resonant tunnelling diodes, optical modulators, cascade lasers, tunable …
An extensive analysis of In0.53Ga0.47As/InP surrounding gate MOSFET to enhance the electrostatic performance using -doped technique
Surrounding gate (SG) heterostructure metal oxide semiconductor field effect transistor
(HMOSFET) has been embraced for generating the future device, which could limit the …
(HMOSFET) has been embraced for generating the future device, which could limit the …
Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1− xAs/GaAs strained quantum wells
B Ściana, D Radziewicz, B Paszkiewicz, M Tłaczała… - Vacuum, 2004 - Elsevier
This work presents the investigations of MOVPE growth of silicon δ-doped GaAs epilayers
and strained InxGa1− xAs/GaAs single quantum wells (SQW). The optimal technological …
and strained InxGa1− xAs/GaAs single quantum wells (SQW). The optimal technological …
Analytical modelling of work‐function modulated delta‐doped TFET to improve analogue performance
In this study, an analytical model for linearly modulated work‐function‐based delta‐doped
single‐gate tunnel field‐effect transistor (TFET) has been developed to improve the …
single‐gate tunnel field‐effect transistor (TFET) has been developed to improve the …
[PDF][PDF] Advanced technology of AIII-BV and AIII-N structures for microelectronics application
B Boratyński, R Korbutowicz, B Paszkiewicz… - Bulletin of the Polish …, 2004 - psjd.icm.edu.pl
In this work studies of MOVPE growth of InAlGaAs/AlGaAs/GaAs heterostructures are
presented. The HRXRD and SIMS measurements indicate the high structural and optical …
presented. The HRXRD and SIMS measurements indicate the high structural and optical …
Characterization of delta-doped GaAs grown by MOVPE
P Gurnik, P Beno, R Srnanek… - The Fourth …, 2002 - ieeexplore.ieee.org
The resolution of the capacitance-voltage (CV) technique on single-and double-delta (/spl
delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The …
delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The …