Research of using plasma methods for formation field emitters based on carbon nanoscale structures
VS Klimin, AA Rezvan, OA Ageev - Journal of Physics …, 2018 - iopscience.iop.org
This paper is devoted to development of technology of formation and obtaining of the design
of a field emitter of electrons with an active region based on carbon nanostructures. The …
of a field emitter of electrons with an active region based on carbon nanostructures. The …
The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the …
VS Klimin, RV Tominov, AV Eskov… - Journal of Physics …, 2017 - iopscience.iop.org
In this paper, experimental studies were carried out on the formation of a microrelief on the
surface of gallium arsenide substrates. The surface was modified by the method of plasma …
surface of gallium arsenide substrates. The surface was modified by the method of plasma …
Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching
VS Klimin, MS Solodovnik, SA Lisitsyn… - Journal of Physics …, 2018 - iopscience.iop.org
This work is devoted to the analysis of problems of the present methods of surface treatment
and the preparation of structures with nanoscale. The urgency of the work is caused by the …
and the preparation of structures with nanoscale. The urgency of the work is caused by the …
Investigation of the influence of parameters of nanoscale profiling of the surface of GaAs structures by a combination of local anodic oxidation and plasma chemical …
VS Klimin, AA Rezvan, IN Kots… - Journal of Physics …, 2018 - iopscience.iop.org
This work is devoted to analysis of problems of present methods of surface treatment of
nanostructures based on gallium arsenide. The idea of a combination of local anodic …
nanostructures based on gallium arsenide. The idea of a combination of local anodic …
Research of influence of the underlayer material on the growth rate of carbon nanotube arrays for manufacturing non-volatile memory elements with high speed
This experimental work is devoted to the regimes of obtaining arrays of carbon nanotubes.
Arrays of perpendicular nanotubes perpendicular to the surface were obtained by the …
Arrays of perpendicular nanotubes perpendicular to the surface were obtained by the …
Study of the effect of carbon-containing gas pressure on the geometric parameters of an array of carbon nanostructures
VS Klimin, AA Rezvan, OA Ageev - Journal of Physics …, 2018 - iopscience.iop.org
In this article, the formation of the production of high-efficiency photovoltaic devices, solar
cells is considered. Increased efficiency is achieved through the use of carbon nanomaterial …
cells is considered. Increased efficiency is achieved through the use of carbon nanomaterial …
Scanning probe techniques for characterization of vertically aligned carbon nanotubes
This chapter presents the results of experimental studies of the electrical, mechanical and
geometric parameters of vertically aligned carbon nanotubes (VA CNTs) using scanning …
geometric parameters of vertically aligned carbon nanotubes (VA CNTs) using scanning …
Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices
NA Shandyba, IV Panchenko… - Journal of Physics …, 2018 - iopscience.iop.org
Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was
shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high …
shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high …
Исследование влияния режимов профилирования поверхности структур на основе арсенида галлия методом плазмохимического травления с учетом потока …
ВС Климин - Известия Южного федерального университета …, 2017 - cyberleninka.ru
Рассмотрены проблемы профилирования поверхности структур на основе арсенида
галлия для последующего эпитаксиального роста. Рассмотрено применения метода …
галлия для последующего эпитаксиального роста. Рассмотрено применения метода …
Mask formation on GaAs substrate by focused ion beams of Ga+ for plasma chemical etching
VS Klimin, IN Kots, VV Polyakova… - … on Micro-and Nano …, 2019 - spiedigitallibrary.org
This paper presents а masking layer formation using the focused ion beams method on the
substrate surface of its own undoped gallium arsenide for subsequent plasma chemical …
substrate surface of its own undoped gallium arsenide for subsequent plasma chemical …