A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …
memory with fast speed, high density, and low power consumption is urgently needed. As an …
High‐throughput screening for phase‐change memory materials
Phase change memory (PCM) is an emerging non‐volatile data storage technology
concerned by the semiconductor industry. To improve the performances, previous efforts …
concerned by the semiconductor industry. To improve the performances, previous efforts …
Active-Tuning and Polarization-Independent Absorber and Sensor in the Infrared Region Based on the Phase Change Material of Ge2Sb2Te5 (GST)
Abstract Phase-change materials (PCMs), possessing thermo-optic and thermo-electric
properties, have constantly enabled the rewritable optical data storage and the …
properties, have constantly enabled the rewritable optical data storage and the …
NbTe4 Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide
Abstract 2D van der Waals (vdW) transition metal di‐chalcogenides (TMDs) have garnered
significant attention in the nonvolatile memory field for their tunable electrical properties …
significant attention in the nonvolatile memory field for their tunable electrical properties …
[HTML][HTML] The effect of thickness on the structural and optical properties of nano Ge-Te-Cu films
Quartz was used as a substrate to hold different film thicknesses of Ge 0.15 Te 0.78 Cu 0.07
within range 100–500 nm prepared by thermal evaporation technique. Films are still …
within range 100–500 nm prepared by thermal evaporation technique. Films are still …
Understanding CrGeTe 3: an abnormal phase change material with inverse resistance and density contrast
Phase change memory is an emerging nonvolatile memory technology, recently becoming
the center of attention to bridge the speed gap between fast dynamic random access …
the center of attention to bridge the speed gap between fast dynamic random access …
Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices
Zero dimensional graphene oxide (GO) quantum dots (GOQDs) have been expected to play
an important role in the development of new memory materials. When the size of GO was …
an important role in the development of new memory materials. When the size of GO was …
Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material
Cr2Ge2Te6 (CrGT) is a phase change material with higher resistivity in the crystalline phase
than in the amorphous phase. CrGT exhibits an ultralow operation energy for amorphization …
than in the amorphous phase. CrGT exhibits an ultralow operation energy for amorphization …
Unveiling the role of Y content in glass-forming ability and soft magnetic properties of Co-YB metallic glasses by experiment and ab initio molecular dynamics …
S Ma, Y Ran, X Liang, L Jiang, Y Li, X Wang… - Journal of Alloys and …, 2022 - Elsevier
The effects of Y content on glass-forming ability (GFA) and soft magnetic properties of Co 75-
x Y x B 25 (x= 0, 3.5, 5) metallic glasses (MGs) were investigated by experiment and ab initio …
x Y x B 25 (x= 0, 3.5, 5) metallic glasses (MGs) were investigated by experiment and ab initio …