The vast of majority of battery electrode materials of contemporary interest are of a
crystalline nature. Crystals are, by definition, anisotropic from an atomic-structure …

Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

Artificial synapses are a key component of neuromorphic computing systems. To achieve
high‐performance neuromorphic computing ability, a huge number of artificial synapses …

The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …

Polycrystalline indium–gallium–zinc oxide (IGZO) in the spinel phase was obtained by
physical vapor deposition (PVD), using reactive sputtering from an IGZO target with …

Understanding the crystallization mechanism of amorphous metal-oxide thin films remains of
importance to avoid the deterioration of multifunctional flexible electronics. We derived the …

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 C deposited c-
axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 …

In an effort to fabricate In–Ga–Zn oxide (IGZO) thin-film transistors (TFTs) that combine high
performance and high stability, we optimize sputtering conditions to create devices based on …

A multifunctional optoelectronic device implementing photodetector, photosynapse, and
photomemory is of increasing attention for neuromorphic system. This enables multiple …

To obtain a high‐luminance active‐matrix organic light‐emitting diode (AMOLED) display
compatible with the high‐dynamic‐range (HDR) technology, we investigated the effect of …