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Rational design of ZnO: H/ZnO bilayer structure for high-performance thin-film transistors
The intriguing properties of zinc oxide-based semiconductors are being extensively studied
as they are attractive alternatives to current silicon-based semiconductors for applications in …
as they are attractive alternatives to current silicon-based semiconductors for applications in …
Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics
The development of nanowire transistors enabled by appropriate dielectrics is of great
interest for flexible electronic and display applications. In this study, nanowire field-effect …
interest for flexible electronic and display applications. In this study, nanowire field-effect …
Enhanced ZnO thin-film transistor performance using bilayer gate dielectrics
We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer
deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V–1 s …
deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V–1 s …
High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment
High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a
nanoscopic self-assembled organic gate insulator and characterized in terms of …
nanoscopic self-assembled organic gate insulator and characterized in terms of …
A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
A low-temperature method, supercritical CO 2 (SCCO 2) fluid technology, is employed to
improve the device properties of ZnO TFT at 150 C. In this work, the undoped ZnO films …
improve the device properties of ZnO TFT at 150 C. In this work, the undoped ZnO films …
Effect of N2O plasma treatment on the performance of ZnO TFTs
Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide plasma
treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms …
treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms …
Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering
We report on the performance of the thin film transistors (TFTs) using ZnO as an active
channel layer grown by using radio frequency (rf) magnetron sputtering technique. The TFT …
channel layer grown by using radio frequency (rf) magnetron sputtering technique. The TFT …
Room-temperature fabrication of high-performance H doped ZnO thin-film transistors
We prepared ZnO: H thin films in Ar+ H 2 atmosphere with substrate at room temperature by
magnetron sputtering, the effect of H 2 flow ratio on the properties of thin films and the …
magnetron sputtering, the effect of H 2 flow ratio on the properties of thin films and the …
Impact of hydrogen plasma treatment on the electrical performances of ZnO thin-film transistors
J Han, A Abliz, D Wan - Chinese Journal of Physics, 2022 - Elsevier
In this study, we investigated the effects of hydrogen plasma (H) treatment on the structure,
surface morphology, and optical and electronic properties of zinc oxide (ZnO) films, and on …
surface morphology, and optical and electronic properties of zinc oxide (ZnO) films, and on …
Effects of electrical bias stress on the performance of ZnO-based TFTs fabricated by RF magnetron sputtering
based thin film transistors (TFTs) were fabricated on a tin oxide (ITO)/glass substrate by
radio frequency (rf) magnetron sputtering at. The transfer characteristics of the fabricated …
radio frequency (rf) magnetron sputtering at. The transfer characteristics of the fabricated …