In this review we summarize the current theoretical and experimental understanding of
clustering phenomena on surfaces, with an emphasis on dynamical properties. The basic …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

The author reviews the current state of knowledge of the structure and surface states of
several clean low-index faces of silicon. These are the (100) face, the (111) 7* 7 face, the …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to
integrate vertical InAs nanowires on Si by modifying initial Si (111) surface in selective-area …

Conjugated Polymer And Molecular Interfaces Page 1 Page 2 Conjugated Polymer and
Molecular Interfaces kience and Technology for Photonic and Optoelectronic Implication; edited …

III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and
optical devices on Si platforms. We present position-controlled and orientation-controlled …

Epitaxial growth of heterolayers has in the past relied on optimization of growth conditions to
overcome thermodynamic obstacles. When there is an intrinsic tendency of a heterolayer to …

Ab initio total-energy calculations indicate that the formation of a new defect complex, a
vacancy surrounded by four arsenic atoms, is responsible for electrical deactivation and for …

The lowest-energy configuration of a class of vicinal Si (100) surfaces has equally spaced
steps, each with a height of two atomic units. This results in a single-domain surface with the …