Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
An overview of phase-change memory device physics
Phase-change memory (PCM) is an emerging non-volatile memory technology that has
recently been commercialized as storage-class memory in a computer system. PCM is also …
recently been commercialized as storage-class memory in a computer system. PCM is also …
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
The global demand for data storage and processing has increased exponentially in recent
decades. To respond to this demand, research efforts have been devoted to the …
decades. To respond to this demand, research efforts have been devoted to the …
Stochastic phase-change neurons
Artificial neuromorphic systems based on populations of spiking neurons are an
indispensable tool in understanding the human brain and in constructing neuromimetic …
indispensable tool in understanding the human brain and in constructing neuromimetic …
Monatomic phase change memory
Phase change memory has been developed into a mature technology capable of storing
information in a fast and non-volatile way,–, with potential for neuromorphic computing …
information in a fast and non-volatile way,–, with potential for neuromorphic computing …
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …
outstanding properties, which has led to their successful use for a long time in optical …
Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials
The reversible phase transitions in phase-change memory devices can switch on the order
of nanoseconds, suggesting a close structural resemblance between the amorphous and …
of nanoseconds, suggesting a close structural resemblance between the amorphous and …
[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …
with this challenge, massive efforts have been devoted to the development of advanced …
Temporal correlation detection using computational phase-change memory
Conventional computers based on the von Neumann architecture perform computation by
repeatedly transferring data between their physically separated processing and memory …
repeatedly transferring data between their physically separated processing and memory …
Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration
The recent development of three‐dimensional semiconductor integration technology
demands a key component—the ovonic threshold switching (OTS) selector to suppress the …
demands a key component—the ovonic threshold switching (OTS) selector to suppress the …
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …