In-memory computing seeks to minimize data movement and alleviate the memory wall by
computing in-situ, in the same place that the data is located. One of the key emerging …

Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy
(PMA) are highly desirable for develo** flexible high-performance spintronic devices …

The ever-growing interest in cryogenic applications has prompted the investigation for
energy-efficient and high-density memory technologies that are able to operate efficiently at …

Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic
tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile …

This brief deals with the impact of spin-transfer torque magnetic random access memory
(STT-MRAM) cell based on double-barrier magnetic tunnel junction (DMTJ) on the …

This paper investigates the impact of thermal stability relaxation in double-barrier magnetic
tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access …

This work explores non-volatile (NV) embedded memories implemented by spin-transfer
torque magnetic random access memories (STT-MRAMs). Our designs are based on state …

This paper explores performance of non-volatile ternary content addressable memories (NV-
TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively …

This work presents energy advantages allowed by the technology and voltage scaling of
spin-transfer torque mag-netic random access memories (STT-MRAMs) based on perpen …

This paper explores the impact on reliability and energy-efficiency in double-barrier
magnetic tunnel junctions (DMTJs)-based smart material implication (SIMPLY) scheme …