Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb (Mg1∕ 3Nb2∕ 3) O3–PbTiO3 films grown on (100) cSrRuO3 …
S Yokoyama, S Okamoto, H Funakubo… - Journal of applied …, 2006 - pubs.aip.org
Relaxor-type ferroelectric (1− x) Pb (Mg 1∕ 3 Nb 2∕ 3) O 3–x Pb Ti O 3 (PMN-PT) films, 2–3
μ m in thickness, with a Pb Ti O 3 content (x) ranging from 0 to 1 were grown on (100) c Sr …
μ m in thickness, with a Pb Ti O 3 content (x) ranging from 0 to 1 were grown on (100) c Sr …
Interfacial coupling and its size dependence in and multilayers
Multilayers of Pb (Mg 1∕ 3 Nb 2∕ 3) O 3 (PMN)-PbTiO 3 (PT) were deposited through
pulsed laser ablation deposition with different periodicities (d= 10, 20, 30, 40, 50, 60, and 70 …
pulsed laser ablation deposition with different periodicities (d= 10, 20, 30, 40, 50, 60, and 70 …
Distribution of pyrochlore phase in Pb (Mg1/3Nb2/3) O3-PbTiO3 films and suppression with a Pb (Zr0. 52Ti0. 48) O3 interfacial layer
Thin films of the relaxor ferroelectric Pb (Mg1/3Nb2/3) O3-PbTiO3 (PMN-PT) on Pt/Ti/SiO2/Si
(Pt/Si) substrates both with and without a Pb (Zr0. 52Ti0. 48) O3 (PZT) interfacial layer were …
(Pt/Si) substrates both with and without a Pb (Zr0. 52Ti0. 48) O3 (PZT) interfacial layer were …
Highly (1 1 1)-oriented and pyrochlore-free PMN–PT thin films derived from a modified sol–gel process
M Feng, W Wang, H Ke, JC Rao, Y Zhou - Journal of alloys and compounds, 2010 - Elsevier
Ferroelectric PMN–PT (68/32) thin films, about 250nm in thickness, have been successfully
grown on Pt/Ti/SiO2/Si substrate by a modified sol–gel process. Pure perovskite phase with …
grown on Pt/Ti/SiO2/Si substrate by a modified sol–gel process. Pure perovskite phase with …
Properties of highly (100) oriented Pb (Mg1∕ 3, Nb2∕ 3) O3–PbTiO3 films on LaNiO3 bottom electrodes
YW Li, ZG Hu, FY Yue, GY Yang, WZ Shi… - Applied Physics …, 2007 - pubs.aip.org
The 70% Pb (Mg 1∕ 3, Nb 2∕ 3) O 3–30% Pb Ti O 3 (PMNT) films have been fabricated on
La Ni O 3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for …
La Ni O 3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for …
Relaxor type perovskites: primary candidates of nano-polar regions
SB Krupanidhi - Journal of Chemical Sciences, 2003 - Springer
Abstract Relaxor properties of 0.7 Pb (Mg 1/3 Nb 2/3) O 3-0.3 PbTiO 3 (PMN-PT) and non-
lead perovskite thin films have been analysed in terms of large frequency dispersion of …
lead perovskite thin films have been analysed in terms of large frequency dispersion of …
Effect of electric field on dielectric response of PMN–PT thin films
A Laha, SB Krupanidhi - Materials Science and Engineering: B, 2004 - Elsevier
Electric field (ac and dc) induced complex dielectric properties of 0.7 Pb (Mg1/3Nb2/3) O3–
0.3 PbTiO3 (PMN–PT) thin films were studied as a function of frequency at different …
0.3 PbTiO3 (PMN–PT) thin films were studied as a function of frequency at different …
Impact of microstructure on dielectric properties of Pb (Mg1/3Nb2/3) O3–PbTiO3 thin films
Relaxor thin films of Pb (Mg1/3Nb2/3) O3–PbTiO3 (PMN–PT) with different microstructures
have been grown on platinum-coated silicon substrate using pulsed excimer laser ablation …
have been grown on platinum-coated silicon substrate using pulsed excimer laser ablation …
Epitaxial ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on La0.7Sr0.3MnO3 bottom electrode
Abstract Epitaxial (001)-oriented 0.7 Pb (Mg 0.33 Nb 0.67) O 3-0.3 PbTiO 3 (PMN-PT) thin
films were deposited by pulsed laser deposition on vicinal SrTiO 3 (001) substrates using La …
films were deposited by pulsed laser deposition on vicinal SrTiO 3 (001) substrates using La …
Pulsed Laser Deposition of Thin Films
In 1964 Smith and Turner provided the first ever proof of concept for the pulsed laser
deposition (PLD) of thin films. The ability of PLD to deposit multicomponent oxide materials …
deposition (PLD) of thin films. The ability of PLD to deposit multicomponent oxide materials …