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Screening magnetic two-dimensional atomic crystals with nontrivial electronic topology
To date, only a few two-dimensional (2D) magnetic crystals have been experimentally
confirmed, such as CrI3 and CrGeTe3, all with very low Curie temperatures (TC). High …
confirmed, such as CrI3 and CrGeTe3, all with very low Curie temperatures (TC). High …
Nonlayered tellurene as an elemental 2D topological insulator: Experimental evidence from scanning tunneling spectroscopy
We report the formation of a nonlayered tellurene monolayer in its alpha-phase through an
anisotropic ultrasonication method. The nonlayered tellurene has so far been predicted to …
anisotropic ultrasonication method. The nonlayered tellurene has so far been predicted to …
Generation of Bright–Dark Pulses in Erbium-Doped Fiber Lasers Based on a Germanene-Saturable Absorber
L Shi, Y Xue, B Xu, J Wang, K Jiang… - ACS Applied Nano …, 2024 - ACS Publications
As a group IV graphene-like material, germanene has fast carrier relaxation time and
excellent nonlinear saturable absorption properties, which make it have a broad application …
excellent nonlinear saturable absorption properties, which make it have a broad application …
A non-invasive gating method for probing 2D electron systems on pristine, intrinsic H-Si (111) surfaces
LD Robertson, BE Kane - Applied Physics Letters, 2020 - pubs.aip.org
Intrinsic Si (111) surfaces passivated with atomic hydrogen are an ideal platform to host two-
dimensional electron systems. Traditional methods to probe these surfaces, however …
dimensional electron systems. Traditional methods to probe these surfaces, however …
A Non-Invasive Electrostatic Gating Method for Probing Two-Dimensional Electron Systems on Pristine, Chemically-Terminated, Intrinsic Si Surfaces
LD Robertson - 2021 - search.proquest.com
We have demonstrated a new and effective method for the non-invasive electrostatic gating
of pristine, chemically-terminated, intrinsic Si surfaces. This was achieved using a silicon-on …
of pristine, chemically-terminated, intrinsic Si surfaces. This was achieved using a silicon-on …