Nickel–silicon intermetallics have been prepared by a direct silicification method using SiH4
as the silicon source. The prepared nickel–silicon intermetallics were characterized by X-ray …

We exploited the oxide shell structure to explore the structure confinement effect on the
nickel silicide growth in one-dimensional nanowire template. The oxide confinement …

The formation of Ni silicide during the reaction between Ni (5% Pt) and a Si (100) substrate
has been analyzed by differential scanning calorimetry (DSC), in situ x-ray diffraction (XRD) …

The formation of Ni silicide alloyed with Pt has been analyzed by atom probe tomography. A
300° C/1h anneal results in simultaneous growth of the NiSi and Ni2Si phases: the Ni2Si …

Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications
covers the basic fundamentals, techniques, applications, and latest developments in the …

Nickel nanowires have been formed by stationary electrochemical deposition of nickel into
mesoporous silicon templates from the modified Watts bath. Monitoring of the porous silicon …

Structural and magnetic properties of Ni nanowires electrochemically deposited into pores of
mesoporous silicon template under the stationary galvanostatic regime have been …

The first stages of the growth of the NiSi phase at the expense of θ-Ni 2 Si have been
studied mainly by in-situ XRD measurements and atom probe tomography (APT) analysis. In …

Ge 1− x Sn x thin films with a Sn content of x≥ 0.1 present a direct bandgap, which is very
interesting for the fabrication of efficient photonic devices. The monostanogermanide phase …

The synthesis of nickel silicide thin films via a vapor–solid reaction has been studied by
exposing thin (10 nm) Ni films to silane (SiH4). The crystalline phases, the Ni/Si …