This paper reviews recent developments in process technology of high-speed SiGe HBTs at
IHP. Two device concepts, one with selective epitaxial growth and one with non-selective …

Recent advances in complementary metal oxide semiconductor (CMOS) processing,
continuous scaling of gate length, and progress in silicon on insulator have stirred serious …

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …

Abstract A 0.25 µm SiGe: C BiCMOS technology family (SG25H) with high-speed npn and
pnp transistors for different performance requirements is presented. A CMOS-friendly …

We present the status and direction of silicon semiconductor technologies targeted for
applications such as wireless, networking, instrumentation, and storage markets. Various …

Scaling has been the principal driving force behind the successful technology innovations of
the past half-century. This paper investigates the impacts of scaling on SiGe heterojunction …

This work reports on a 130 nm BiCMOS technology with high-speed SiGe: C HBTs featuring
a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an …

A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has
been developed in SiGe HBT technology for frequency-modulated continuous-wave …

This paper presents a SiGe differential low-noise amplifier (LNA) for the V-band. The
measured gain at 60 GHz is 18 dB, and the input return loss is below-15 dB. The 3-dB …

This paper summarizes opportunities for silicon process technologies at mmwave and
terahertz frequencies and demonstrates key building blocks for 94-GHz and 600-GHz …