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Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency
This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …
Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures
In this study, metal-oxide (NiO: ZnO) nanocomposites mixed with different weight-
percentages (2, 10, 20% NiO) content were coated on the p-Si wafer via spin-coating …
percentages (2, 10, 20% NiO) content were coated on the p-Si wafer via spin-coating …
Light triggering performance of the van der Waals heterojunction of 2D/0D graphdiyne/graphdiyne quantum dot as a novel phototransistor
In the last decade, the combination of two or more semiconductors with different
dimensionality to improve the performance of optical devices has become widespread …
dimensionality to improve the performance of optical devices has become widespread …
Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers
In this study, the effects of illumination on the electrical properties as well as the structural,
optical and photo-electrical properties of organic complex-based photodiodes synthesized …
optical and photo-electrical properties of organic complex-based photodiodes synthesized …
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
Abstract Au/Ti/HfO 2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were
fabricated by atomic layer deposition technique and their electrical properties were …
fabricated by atomic layer deposition technique and their electrical properties were …
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
The electrical properties of Au/Ti/HfO 2/n-GaAs metal/insulating layer/semiconductor (MIS)
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …
Investigation the performance of Cr-doped ZnO nanocrystalline thin film in photodiode applications
Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si
substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray …
substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray …
Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by
spin-coating method. The photoresponse and electrical properties of the Al/symmetrical …
spin-coating method. The photoresponse and electrical properties of the Al/symmetrical …
Synthesize and characterization of Co-complex as interlayer for Schottky type photodiode
Nicotinamide/nicotinic acid complexes with centered Co metal (called Co-complexes) were
synthesized by chemically reactions and characterized by thermogravimetric analysis (TGA) …
synthesized by chemically reactions and characterized by thermogravimetric analysis (TGA) …
Cu and Mn centered nicotinamide/nicotinic acid complexes for interlayer of Schottky photodiode
Schottky type photodiodes have gained great interest due to their fast response to light.
Various materials have been used to improve their efficiency behaviors as interlayers or …
Various materials have been used to improve their efficiency behaviors as interlayers or …