Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two
electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron …

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-
phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low …

Raman instrumentation design has improved radically in efficiency and ease of use over the
past 15 years. New technologies made this possible with introduction of the first commercial …

Si/SiGe heterostructures are of high interest for high-mobility transistor and qubit
applications, specifically for operations below 4.2 K. In order to optimize parameters such as …

Raman scattering experiments were carried out on Si∕ Si Ge heterostructures. The strain in
both the top Si layer, and the Si 1− x Ge x buffer layers with various Ge compositions was …

Epitaxial films of In 2 O 3 have been grown on Y-stabilised ZrO 2 (111) substrates by
molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest …

We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like, and disorder-activated (DA)
vibrational modes in GeSn semiconductors investigated using Raman scattering …

A comprehensive study of the biaxial strain-induced shift of the Si 1− x Ge x Raman active
phonon modes is presented. High-resolution Raman measurements of Si 1− x Ge x/Si …

Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip
applications. Increasingly, the electronic parts of silicon technology will carry out the data …